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Items for "Non-Volatile Memory"

Resistive Switching in Ge0.3Se0.7 Films by Means of Copper Ion Migration

Cu/Ge0.3Se0.7/Pt cells were prepared and bipolar resistive switching in Ge0.3Se0.7 films by means of copper ion migration was examined...

Keywords: Resistive Switching, Non-Volatile Memory, Chalcogenide Films, Ion Migration

11/2007 | Zeitschrift für Physikalische Chemie, Oldenbourg Wissenschaftsverlag