This article presents a setup for indirect measurement of intrinsic voltage and current waveforms (at the active channel) of a non-linearly operated microwave transistor. The setup also gives control on the load impedances at the fundamental and the harmonic frequencies at the output which are introduced by the device’s non-linearities. To allow for the measurement of transistors in highly efficient operating points an almost perfect reflection of the harmonic frequencies is required. This is achieved by the use of “active loads”. The proper operation of the setup is demonstrated by measurements of a pHEMT microwave transistor.
Print ISSN: 0171-8096
Volume: 72, 04/2005
Pages: 205 - 214