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A. Sutor, Reinhard Lerch

PSpice-Model for a CMOS-Compatible Stress Sensor Based on the Anisotropy of the Piezoresistive Effect

A new model for the simulation of a CMOS-compatible stress sensor based on the anisotropy of the piezoresistive effect is presented. The sensor is modeled as a quadripole network whose the electrical properties depend among others on mechanical stress, temperature and magnetic field. The model can be incorporated into a PSpice-model and used for the development of signal conditioning circuits. The model parameters are verified through measurements. In order to demonstrate the advantages of the model an application circuit for temperature compensation is simulated and verified.

tm – Technisches Messen, Oldenbourg Wissenschaftsverlag

Print ISSN: 0171-8096
Volume: 68, 05/2001
Pages: 234

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