The growing of monocrystal semiconductor materials using the gradient freeze method makes great demands on the control technique. The reason for this is the securing of an exact temperature profile during germing and during crystal growth which is the precondition for the viability of the time-consuming growing process. The basis for controller design is the system identification by which a mathematical process model is obtained that adequately describes the static and dynamic behaviour of the plant in the growth area. This article introduces the identification of multi-zone furnaces for the growing of single crystals.
Print ISSN: 0178-2312
Volume: 54, 11/2006
Pages: 566 - 573