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A. Graff, S. Senz, N.D. Zakharov, D. Hesse

Structure of the Topotaxial Mg₂SnO₄/MgO Solid Reaction Front

The atomic structure of the Mg₂SnO₄/MgO reaction front obtained by topotaxial solid state reaction is investigated. Due to the difference in lattice parameter the front possesses a positive lattice mismatch of 2.5, which requires the presence of misfit-accommodating defects that must be able to move together with the advancing reaction front. The nature of these defects is studied in detail. Mg₂SnO₄ films were grown on MgO(001) single-crystal substrates via a gas-solid reaction between tin-oxide vapour and the MgO crystal at 1200 and 1300°C in air. The films were investigated by XRD, SEM, TEM, SAED and HRTEM. Their growth almost exactly follows the topotaxial orientation relationship MgO(001)

Zeitschrift für Physikalische Chemie, Oldenbourg Wissenschaftsverlag

Print ISSN: 0942-9352
Volume: 206, 01/1998
Pages: 117

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