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C. Schindler, X. Guo, A. Besmehn, R. Waser

Resistive Switching in Ge_0.3Se_0.7 Films by Means of Copper Ion Migration

Keywords: Resistive Switching, Non-Volatile Memory, Chalcogenide Films, Ion Migration

Cu/Ge_0.3Se_0.7/Pt cells were prepared and bipolar resistive switching in Ge_0.3Se_0.7 films by means of copper ion migration was examined. The cell was switched from the high to the low resistance state at about -50mV, and it was switched back to the high resistance state at about 100mV. The resistance ratio between the high and the low state was up to 200. Up to approximately 10⁴ switching cycles were achieved. Pulse measurements showed that the two resistance states were tuneable by varying the applied voltage and the pulse length. Therefore, it is possible to store more than one bit per cell. The current density is independent of the electrode diameter, indicating that the cell can be scaled down to the range of nanometers. Due to the low switching voltages, non-destructive read out operation, high storage density, and scalability, such cells are promising for future memory applications.

Zeitschrift für Physikalische Chemie, Oldenbourg Wissenschaftsverlag

Print ISSN: 0942-9352
Volume: 221, 11/2007
Pages: 1469 - 1478

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