Low polarizable B2O3-SiO2-Si3N4 glass systems were investigated as regards the low dielectric constant and dielectric loss. The experimental data showed that the low dielectric constant ε and the molar polarizability α m were equivalent, when using Clausius Mosotti´s equation. They showed the low dielectric constants ε 2.13 to 2.47 dielectric losses tan δ 0.002 to 0.006 at 1 GHz, molar polarizabilities αm 39 × 10-25 cm3 to 44 × 10-25 cm3. Increasing the content of silicon nitrite decreased the values of ε and αm and enhanced flow points Tf. These glasses have the potential to apply to the interlayer insulator of multilevel interconnection in ULSI (Ultra Large Scale Integration), which is compatible with aluminum interconnection.
Print ISSN: 0942-9352
Volume: 208, 01/1999
Pages: 267