The kinetics of the catalytic decomposition of hydrazine at clean GaAs surfaces (polycrystalline and oriented single crystals) has been studied by means of a mass spectrometer at low pressures (10-8 to 10-5 Torr). Reaction products are N2, H2 and NH3, and the rate of formation of all products is proportional to √pN2H4. A reaction mechanism is discussed whereby the rate determining step is the dissociation of adsorbed NH2 radicals. The preexponential factor increases on illumination which suggests the participation of free charge carriers in the surface reaction.
Print ISSN: 0942-9352
Volume: 75, 01/1971
Pages: 0137 - 0154